Projects
Project E
The goal of project E is to implement high-quality electron spin qubits in silicon quantum dots. Detailed studies of the involved spin states, energy levels, and the sources and effects of noise shall result in an optimized qubit performance and ensure reproducibility. Suitable nanomagnets lead to position-dependent magnetic fields. These provide a possibility to manipulate the electron's spin by changing its position electrically, thus performing qubit operations by electrical means.
Project H
Removing a valence-band electron from a quantum dot results in a hole, which can be considered as a particle, in analogy to a bubble (removed droplet) within water. Project H is dedicated to the realization of high-quality hole-spin qubits in nanostructures that are based on germanium or silicon, such as FinFETs used in mobile phones. Holes have an unusually strong, electrically controllable spin-orbit interaction, which allows for very fast qubit operations even without nanomagnets.
Project A
Upscaling to a large qubit count is crucial for a quantum computer of practical use. Therefore, project A addresses questions on the architecture. For instance, we study cryogenic control electronics, multi-qubit operations, and methods to perform quantum logic gates between qubits which are located far apart. Software-related topics, such as schemes and algorithms for efficient quantum error correction, also play a central role.