NCCR SPIN Research Seminar: High mobility SiMOSFETs fabricated in a full 300mm CMOS process

Name: NCCR SPIN Research Seminar: High mobility SiMOSFETs fabricated in a full 300mm CMOS process — NCCR SPIN: Spin Qubits in Silicon
Start: 2021-06-17T12:15:00+0200
End: 2021-06-17T13:00:00+0200

Thursday, June 17, 2021
12:15 PM 1:00 PM

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Speaker: Tim Camenzind, Department of Physics, University of Basel

Place: Zoom Meeting

https://unibas.zoom.us/j/63246248901?pwd=dU5CcklPck1maE0wamx2dWxzUXpJdz09

Meeting ID: 632 4624 8901
Passcode: 946284

Abstract:

The quality of the semiconductor-barrier interface plays a pivotal role in the demonstration of high quality reproducible quantum dots for quantum information processing. In this work, we have measured SiMOSET Hall bars on undoped Si substrates in order to investigate the quality of the devices fabricated in a full CMOS process. We report a record mobility of 17'500 cm2/Vs with a sub-10 nm oxide thickness indicating a high quality interface, suitable for future qubit applications. We also study the influence of gate materials on the mobilities and discuss the underlying mechanisms, giving insight into further material optimization for large scale quantum processors.

Posted In: SPIN Seminar

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